| 低压TiO_2系压敏陶瓷的伏安特性实验分析 |
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| 引用本文： | 朱道云,周方桥,丁志文.低压TiO_2系压敏陶瓷的伏安特性实验分析[J].电子元件与材料,2010,29(5). |
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| 作者姓名： | 朱道云 周方桥 丁志文 |
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| 作者单位： | 1. 广东工业大学,实验教学部,广东,广州,510006
2. 广州大学,固体物理与材料研究实验室,广东,广州,510405 |
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| 基金项目： | 广东工业大学博士启动基金资助项目，广州市教育局科技计划 |
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| 摘 要： | 采用耗尽层近似理论,分析了低压TiO2系压敏陶瓷在直流偏压下的伏安特性,并对ZnO、TiO2和SrTiO3系三种压敏陶瓷的伏安特性进行了测试、分析和比较。结果表明,在晶界势垒不太高(一般为零点几电子伏)及晶界电场强度不太大(约106V/m量级)的情况下,TiO2系压敏陶瓷晶界的电子传输机制不同于ZnO系压敏陶瓷,而与SrTiO3系压敏陶瓷的导电机制相似,属于肖特基热电子发射机制。
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| 关 键 词： | TiO2系压敏陶瓷 伏安特性 热电子发射 肖特基势垒 |
Voltage current characteristic of TiO2 system varistor ceramics with low breakdown voltage |
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| ZHU Daoyun,ZHOU Fangqiao,DING Zhiwen.Voltage current characteristic of TiO2 system varistor ceramics with low breakdown voltage[J].Electronic Components & Materials,2010,29(5). |
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| Authors: | ZHU Daoyun ZHOU Fangqiao DING Zhiwen |
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| Abstract: | The voltage current characteristic of TiO2 system varistor ceramics at DC bias voltage was analyzed by depletion layer approximation theory.By comparing and analyzing the similarities and differences of the measured V-I curves of ZnO,TiO2 and SrTiO3 system varistors,the mechanism of electron transmission through grain boundary of TiO2 system varistor ceramics was proposed.It shows that,at low energy barrier height and small grain boundary electric field strength,the electron transmission mechanism through TiO2 grain boundary is the thermionic emission in Schottky barrier,which is similar to that of SrTiO3 system varistor ceramics and is different from that of ZnO system varistor ceramics. |
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| Keywords: | TiO2 system varistor ceramics V-I characteristic thermionic emission Schottky barrier |
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