| Preparation and properties of SrBi2.2 Ta2O9 thin film |
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| 基金项目： | Project（ HIT. 2001. 67） supported by the Scientific Research Foundation of Harbin Institute of Technology; project （50172012） supported by the National Natural Science Foundation of China |
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| 摘 要： | SrBi2.2 Ta2O9 (SBT) thin film with thickness of 2 μm was successfully prepared by sol-gel method, using strontium acetate semihydrate Sr(CH3 COO)2 · 1/2H2O] and bismth subnitrate BiO(NO3)], and tantalum ethoxide Ta(OCH2CH3)5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction (XRD) and transmission electron
microscope(TEM) results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed
after being annealed at 800 °C for for 1 min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4. 2 μ/C/cm2.
Foundation item: Project (HIT. 2001. 67) supported by the Scientific Research Foundation of Harbin Institute of Technology; project (50172012)
supported by the National Natural Science Foundation of China
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| 关 键 词： | SrBi2.2 Ta2O9 薄膜 溶胶-凝胶法 铁电物质 X射线衍射 |
| 文章编号： | 1005-9784（2005）04-0376-04 |
| 收稿时间： | 2004-10-20 |
| 修稿时间： | 2004-12-13 |
Preparation and properties of SrBi2.2 Ta2O9 thin film |
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| Authors: | Wang Wen Jia De-chang and Zhou Yu |
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| Affiliation: | (1) Department of Materials Science and Engineering, Harbin Institute of Technology, 150001 Harbin, China |
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| Abstract: | SrBi2.2 Ta2O9 (SBT) thin film with thickness of 2 μm was successfully prepared by sol-gel method, using strontium acetate semihydrate Sr(CH3 COO)2 · 1/2H2O] and bismth subnitrate BiO(NO3)], and tantalum ethoxide Ta(OCH2CH3)5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction (XRD) and transmission electron
microscope(TEM) results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed
after being annealed at 800 °C for for 1 min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4. 2 μ/C/cm2.
Foundation item: Project (HIT. 2001. 67) supported by the Scientific Research Foundation of Harbin Institute of Technology; project (50172012)
supported by the National Natural Science Foundation of China |
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| Keywords: | SrBi2 2 Ta2O9 sol-gel technique thin film ferroelectric |
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