Synthesis of carbon-nitride films using a fast-switched dual-source low energy ion beam deposition system

Thin C_xN_y films were deposited in UHV using alternating low energy ion beams of C⁺ and N⁺ or N₂⁺ in the energy range of 5 to 100 eV. The ion beam deposition system is equipped with two Freeman ion sources, mass analysis and fast automated beam switching, allowing perpendicular bombardment of the target with a single ion beam at a time. The composition and density of the films were studied by ARS (in situ), XPS and RBS. The dependence of the film properties and growth mechanisms on ion energy, beam switching rate, and C-to-N arrival ratio have been investigated. The influence of the deposition parameters on the film stoichiometry is discussed. Exposure of the film to atmosphere leads to oxygen incorporation, resulting in a lowered surface concentration of nitrogen. The XPS N 1s and C Is binding energies vary in a relatively broad range indicating that several bond states may be present. The influence of the substrate material on film growth has also been studied. On Si{100}, film growth commences with the formation of an interfacial silicon nitride. No film growth was observed on gold, however deposition was possible on tantalum and molybdenum.