| 三种胍盐对低磨料浓度碱性阻挡层抛光液性能的影响 |
| |
| 引用本文： | 陈国栋,刘玉岭,牛新环.三种胍盐对低磨料浓度碱性阻挡层抛光液性能的影响[J].半导体学报,2014,35(11):116003-5. |
| |
| 作者姓名： | 陈国栋 刘玉岭 牛新环 |
| |
| 作者单位： | Institute of Microelectronics,Hebei University of Technology |
| |
| 基金项目： | The Major Program of the Chinese Academy of Sciences，Hebei Natural Science Foundation of China（E2013202247） |
| |
| 摘 要： | The influence of three kinds of guanidinium salt on the removal rate selectivity of different materials was studied during the barrier chemical mechanical polishing(CMP) process at first.The three kinds of guanidine saltguanidine hydrochloride,guanidine nitrate and guanidine carbonate.Then we compared the effect of the three kinds of guanidine salt on the dishing,erosion and surface roughness value.In the end,the reaction mechanism was studied through electrochemical analysis.All the results indicate that there is a better performance of the slurry with guanidine hydrochloride than the slurries with the other two kinds of guanidine salt.It effectively improved the removal rate selectivity and the surface roughness under the premise of low abrasive concentration and low polishing pressure,which is good for the optimization of the alkaline slurry for the barrier CMP process.
|
| 关 键 词： | slurry roughness polishing alkaline selectivity abrasive TEOS carbonate erosion premise |
| 收稿时间： | 4/4/2014 12:00:00 AM |
Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP |
| |
| Chen Guodong,Liu Yuling and Niu Xinhuan.Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP[J].Chinese Journal of Semiconductors,2014,35(11):116003-5. |
| |
| Authors: | Chen Guodong Liu Yuling and Niu Xinhuan |
| |
| Affiliation: | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China;Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China |
| |
| Abstract: | The influence of three kinds of guanidinium salt on the removal rate selectivity of different materials was studied during the barrier chemical mechanical polishing (CMP) process at first. The three kinds of guanidine saltguanidine hydrochloride, guanidine nitrate and guanidine carbonate. Then we compared the effect of the three kinds of guanidine salt on the dishing, erosion and surface roughness value. In the end, the reaction mechanism was studied through electrochemical analysis. All the results indicate that there is a better performance of the slurry with guanidine hydrochloride than the slurries with the other two kinds of guanidine salt. It effectively improved the removal rate selectivity and the surface roughness under the premise of low abrasive concentration and low polishing pressure, which is good for the optimization of the alkaline slurry for the barrier CMP process. |
| |
| Keywords: | guanidinium removal rate selectivity electrochemical CMP |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
