| P 型氮化镓层生长压力对InGaN/GaN基发光二极管性能的影响 |
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| 引用本文： | 付丙磊,刘乃鑫,刘喆,李晋闽,王军喜.P 型氮化镓层生长压力对InGaN/GaN基发光二极管性能的影响[J].半导体学报,2014,35(11):114007-4. |
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| 作者姓名： | 付丙磊 刘乃鑫 刘喆 李晋闽 王军喜 |
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| 作者单位： | Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences |
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| 摘 要： | The advantages of In Ga N/Ga N light emitting diodes(LEDs) with p-Ga N grown under high pressures are studied.It is shown that the high growth pressure could lead to better electronic properties of p-Ga N layers due to the eliminated compensation effect.The contact resistivity of p-Ga N layers are decreased due to the reduced donor-like defects on the p-Ga N surface.The leakage current is also reduced,which may be induced by the better filling of V-defects with p-Ga N layers grown under high pressures.The LED efficiency thus could be enhanced with high pressure grown p-Ga N layers.
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| 关 键 词： | eliminated defects resistivity leakage compensation donor filling roughness spacing illustrate |
| 修稿时间： | 5/6/2014 12:00:00 AM |
Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure |
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| Fu Binglei,Liu Naixin,Liu Zhe,Li Jinmin and Wang Junxi.Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure[J].Chinese Journal of Semiconductors,2014,35(11):114007-4. |
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| Authors: | Fu Binglei Liu Naixin Liu Zhe Li Jinmin and Wang Junxi |
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| Affiliation: | Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The advantages of InGaN/GaN light emitting diodes (LEDs) with p-GaN grown under high pressures are studied. It is shown that the high growth pressure could lead to better electronic properties of p-GaN layers due to the eliminated compensation effect. The contact resistivity of p-GaN layers are decreased due to the reduced donor-like defects on the p-GaN surface. The leakage current is also reduced, which may be induced by the better filling of V-defects with p-GaN layers grown under high pressures. The LED efficiency thus could be enhanced with high pressure grown p-GaN layers. |
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| Keywords: | light emitting diodes V-defects growth pressure p-GaN |
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