Semi-insulating InP: Fe regrowth by the hydride VPE technique aroundp-InP substrate laser mesas fabricated by reactive ion etching |
| |
| Authors: | S. Lourdudoss S. Nilsson L. Bäckbom T. Klinga O. Kjebon B. Holmberg |
| |
| Affiliation: | 1. Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden
|
| |
| Abstract: | Successful regrowth of semi-insulating (SI) InP: Fe by the hydride vapour phase epitaxy technique around reactive ion etched vertical mesas of laser grown on Zn dopedp-InP substrate is demonstrated. The device performance of the buried heterostructure laser is presented. The current confining property of the regrown SI-InP: Fe are good although it lies adjacent to InP: Zn. |
| |
| Keywords: | VPE LPE regrowth semi-insulating InP:Fe reactive ion etching p-substrate laser |
| 本文献已被 SpringerLink 等数据库收录！ |
