Impact ionization and transport in the InAlAs/n+-InPHFET |
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Authors: | Greenberg DR del Alamo JA Bhat R |
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Affiliation: | MIT, Cambridge, MA; |
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Abstract: | We have carried out an experimental study exploring both impact ionization and electron transport in InAlAs/n+-InP HFET's. Our devices show no signature of impact ionization in the gate current, which remains below 17 μA/mm under typical bias conditions for Lg=0.8 μm devices (60 times lower than for InAlAs/InGaAs HEMT's). The lack of impact ionization results in a drain-source breakdown voltage (BVDS) that increases as the device is turned on, displaying an off-state value of 10 V. Additionally, we find that the channel electron velocity approaches the InP saturation velocity of about 107 cm/s (in devices with Lg<1.6 μm) rather than reaching the material's peak velocity. We attribute this to the impact of channel doping both on the steady-state peak velocity and on the conditions necessary for velocity overshoot to take place. Our findings suggest that the InP-channel HFET benefits from channel electrons which remain cold even at large VGS and VDS making the device well-suited to power applications demanding small IG, low gd, and high BVDS |
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