High-performance large-area InGaAs metal-semiconductor-metalphotodetectors |
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| Authors: | Hieronymi F Bottcher EH Droge E Kuhl D Bimberg D |
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| Affiliation: | Inst. fuer Festkoperphys. I, Tech. Univ. Berlin ; |
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| Abstract: | The fabrication and characteristics of high-performance large-area InP:Fe/InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors are reported. With a 350-μm×350-μm active area, the detectors offer 900-MHz electrical bandwidth and 1.7-pF capacitance at 10-V bias. The respective dark current density is 20 pA/μm2, an the CW responsivity is 0.4 A/W at 1.3-μm wavelength. The detectors are therefore ideally suited for applications in the long-wavelength range that require a large detection area and, at the same time, a high bandwidth and low capacitance |
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