BF_2~+,F~+ +B~+和Ar~++B~+注入硅快速退火剩余损伤及对浅P~+N结的影响(英文) |
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引用本文: | 张廷庆,刘家璐. BF_2~+,F~+ +B~+和Ar~++B~+注入硅快速退火剩余损伤及对浅P~+N结的影响(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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作者姓名: | 张廷庆 刘家璐 |
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作者单位: | 西安电子科技大学微电子研宄所(张廷庆),西安电子科技大学微电子研宄所(刘家璐) |
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摘 要: |
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Residual Damage of BF_2~+F~+ + B~+and Ar~+ +B~+ Implanted Silicon After RTA and Influence on Shallow P~+ N Junction |
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Abstract: | The residual damage is analysed by transmission electron microscopy (TEM) for BF2+, F+ + B+ and Ar+ + B+ implanted silicon after rapid thermal annealing(RTA). And the reverse leakage current of the implanted diodes is measured using a FJ-356 electrometer. The results show that 1 ) The residual damage due to BF2+ implantation is less than that of F+ + B + and Ar++ B+ implantation. 2) The reverse leakage current of BF2+ implanted diodes is less than that of F+ + B+ and Ar++ B + implanted diodes. 3) The reverse leakage current of F++B+ and Ar++ B+ implanted diodes increases with the increase of F+ and Ar+ energies, respectively. Therefore the physical behaviour of the interaction between molecular ion and silicon is different from that of the interaction between individual atom ion and silicon. |
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