Si–C multilayer quasi crystals preparation by DC magnetron sputtering

Silicon carbide (SiC) is becoming one of the most important electronic materials in recent years. Single crystalline SiC is a wide-bandgap semiconductor, which finds a wide range of applications in high temperature, power consuming, and fast-acting electron devices. Common methods applied for silicon carbide films deposition are: plasma-enhanced CVD under plasma decomposition of organic compounds such as CH₄, C₂H₂, C₃H₈. These methods are complicated and expensive.

In this work we grew silicon–carbon films as Si–C thin film multilayer system with successive layers of Si and C both of equal thicknesses. The Si–C systems grown in our experiments consisted of 40 sub-layers, deposited by DC magnetron sputtering on silicon, on glass, and on Au substrates in argon plasma environment. Sputtering was provided continuously from two targets: graphite and single-crystalline silicon. Optical and electro-physical properties of the deposited thin film systems were investigated. Relative permittivity of the grown thin film systems was found to be the main and most important parameter of the Si–C system.