Effects of La2O3/ZnO Additives on Microstructure And Microwave Dielectric Properties of Zr0.8Sn0.2TiO4 Ceramics |
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Authors: | Rajiv Kudesia Anna E. McHale Robert L. Snyder |
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Affiliation: | New York State College of Ceramics, Alfred University, Alfred, New York 14802 |
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Abstract: | Dielectric ceramics of Zr0.8Sn0.2TiO4 containing La2O3 and ZnO as sintering aids were prepared and investigated for microstructure and microwave dielectric properties. Low-level doping with La2O3 and ZnO (up to 0.30 wt%) is good for densification and dielectric properties. These additives do not affect the dielectric constant and the temperature coefficient. Dielectric losses increase significantly at additive levels higher than 0.15 wt%. The combined additives La2O3 and ZnO act as grain growth enhancers. With 0.15 wt% additives, a ceramic having a dielectric constant, a quality factor, and a temperature coefficient of frequency at 4.2 GHz of 37.6, 12 800, and –2.9 ppm/°C, respectively, was obtained. The quality factor was considerably improved by prolonged sintering. |
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