Caractérisation et résultats de fiabilité de transistors à haute mobilité électronique (HEMT) |
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Authors: | Abdenabi Belhadj Pierre Audren Christian Vuchener Joseph Paugam Jean-Michel Dumas |
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Affiliation: | 1. CNET LAB-OCM-TOH, BP 40, 22301, Lannion Cedex 2. Institut Universitaire de Technologie, BP 150, 22301, Lannion Cedex
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Abstract: | The telecommunication systems require introduction of high performance devices especially for microwave applications. The emergence of molecular beam epitaxy as a growth technique allows the fabrication of heterostructure-based performing devices. Thus, this communication will focus on the reliability of technologies used for the development of field effect transistor using heterostructures and called HEMT (high electron mobility transistor). |
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