Al0.3Ga0.7As-GaAs microwave resonant tunneling oscillator |
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Authors: | Rachid Bouregba Olivier Vanbesien Loic Saint de Pol Didier Lippens |
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Affiliation: | 1. Centre hyperfréquences et semiconducteurs, Université de Lille-Flandres-Artois, Bat. P4, F-59655 Villeneuve d’ Ascq Cedex
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Abstract: | We describe the design of a microwave oscillator using resonant tunneling diodes. The devices are fabricated from Al0.3Ga0.7As-GaAs double barrier hetero-structures grown by molecular beam epitaxy. Design criteria improving current drivability are established from a theoretical study of tunneling transmission probabilities. Very high peak current densities up to 3.104 A/cm2, favorable for high frequency operation as an oscillator, have been achieved experimentally. The devices exhibit stable oscillations at liquid nitrogen temperature and at room temperature when the tunnel diode oscillator is constructed with a stabilizing network. |
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