High purity InP grown by chemical beam epitaxy

A Hall mobility as high as 176,200 cm²V⁻¹ s⁻¹ at 77 K withN _d -N _a =1.3×10¹⁴ cm⁻³ has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535° C with linewidths of 0.07 meV. Excitonic transitions have been recorded between 2 and 250 K. The free exciton energy position leads to a highly accurate expression of the band gap energy, which extrapolates toE _g =1.347 eV at 300 K.