Ferroelectric properties of Bi3.4Ho0.6Ti3O12 thin films prepared by sol-gel method |
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| Authors: | ChengJu Fu ZhiXiong Huang Jie Li and DongYun Guo |
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| Affiliation: | (1) School of Materials Science and Technology, Wuhan University of Technology, Wuhan, 430070, China;(2) School of Mechanical Engineering, Chongqing University of Science and Technology, Chongqing, 400050, China;(3) Department of Physics, Wuhan University, Wuhan, 430072, China |
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| Abstract: | We have prepared the Ho-substituted bismuth titanate (Bi3.4Ho0.6Ti3O12, BHT) thin films on Pt/Ti/SiO2/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ray diffraction
and atomic force microscopy. The BHT film shows a single phase of Bi-layered Aurivillius structure and dense microstructure.
The 2Pr and 2Ec of the 600-nm-thick BHT film were 38.4 μC/cm2 and 376.1 kV/cm, respectively at applied electric field 500 kV/cm. The dielectric constant and dielectric loss are about
310 and 0.015 at a frequency of 1 MHz, respectively. The Pr value decreased to 93% of its pre-fatigue values after 4.46×109 switching cycles at 1 MHz frenquency, and the BHT film shows good insulating behavior according to the test of leakage current.
Supported by the Hubei Province Natural Science Foundation (Grant No. 2007ABA309) |
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| Keywords: | Bi3 4Ho0 6Ti3O12 thin film sol-gel method ferroelectric property fatigue dielectric constant |
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