| 一种可变门极电阻的大功率IGBT驱动 |
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| 引用本文： | 谷宇,张东来,贺长龙,张斌.一种可变门极电阻的大功率IGBT驱动[J].测控技术,2016,35(3):136-139. |
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| 作者姓名： | 谷宇 张东来 贺长龙 张斌 |
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| 作者单位： | 1. 深圳市航天新源科技有限公司,广东深圳,518057;2. 哈尔滨工业大学深圳研究生院,广东深圳,518055;3. 深圳航天科技创新研究院,广东深圳,518057 |
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| 基金项目： | 中国航天科技集团公司科技创新研发项目（天科研［2013］1047）；国家国际科技合作计划资助项目（2010DFB63050）；深圳市电力电子与电力传动重点实验室资助项目（ZDSYS20140509151953007） |
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| 摘 要： | 通过分析大功率IGBT寄生参数及主功率回路寄生参数对IGBT驱动的影响,提出了一种基于可变门板电阻的驱动电路,提高了驱动模块的产品兼容性,实现了驱动器对IGBT开关特性的精确控制,有效抑制开关过程中由于di/dt引起的电压尖峰.最后在Sabor中搭建了型号为FZ1500R33HE3的大功率IGBT的仿真模型,并进行仿真分析;通过搭建实物平台进行了双脉冲实验.仿真和实验结果表明,该驱动电路具有可行性.
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| 关 键 词： | 大功率IGBT驱动 可变门极电阻 低纹波噪声 |
A Novel High Power IGBT Driver Circuit with Variable Gate Resistance |
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| GU Yu,ZHANG Dong-lai,HE Chang-long,ZHANG Bin.A Novel High Power IGBT Driver Circuit with Variable Gate Resistance[J].Measurement & Control Technology,2016,35(3):136-139. |
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| Authors: | GU Yu ZHANG Dong-lai HE Chang-long ZHANG Bin |
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| Abstract: | By analyzing the parasitic parameters of high power IGBT and main power circuit,a novel driving circuit based on the variable gate resistances is put forward.This method can improve the compatibility of the drive module,realize accurate control of the drive of IGBT switching characteristics,and effectively reduce the voltage spikes through switching process due to the di/dt.In the end,the simulation model of IGBT is built in Sabor,and a double pulse experiment is completed based on the platform of FZ1500R33HE3.Simulation and experiment results show the feasibility of the driving circuit. |
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| Keywords: | high power IGBT driver variable gate resistance low ripple noise |
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