| p型微晶硅膜的研究及其在异质结太阳电池中的应用 |
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| 引用本文： | 赵会娟,谷锦华,吴晨阳,杨仕娥,陈永生,卢景霄.p型微晶硅膜的研究及其在异质结太阳电池中的应用[J].真空科学与技术学报,2012,32(3):248-251. |
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| 作者姓名： | 赵会娟 谷锦华 吴晨阳 杨仕娥 陈永生 卢景霄 |
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| 作者单位： | 郑州大学物理工程学院材料物理教育部重点实验室 郑州 450052 |
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| 基金项目： | 国家重点研究发展规划(批准号:2006CB202601);河南省基础与前沿技术研究计划(批准号:82300443203)资助的课题 |
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| 摘 要： | 首先采用射频等离子体增强化学气相沉积技术制备了电导率为0.13 S/cm、晶化率为50%的p型微晶硅,然后制备了μc-Si∶H(p)/c-Si(n)异质结太阳电池。初步研究了硼掺杂比、辉光功率密度、p型硅薄膜的厚度和氢处理时间等这些参数对电池开压的影响。在优化的工艺参数下得到异质结电池最大开路电压Voc为564mV。
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| 关 键 词： | p型薄膜硅 异质结太阳电池 开路电压 射频等离子体增强化学气相沉积 |
Growth of p-Type Microcrystalline Silicon Films and Its Application in Heterojunction Solar Cells |
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| Zhao Huijuan
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Gu Jinhua
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Wu Chenyang
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Yang Shie
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Chen Yongsheng
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Lu Jingxiao.Growth of p-Type Microcrystalline Silicon Films and Its Application in Heterojunction Solar Cells[J].JOurnal of Vacuum Science and Technology,2012,32(3):248-251. |
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| Authors: | Zhao Huijuan Gu Jinhua Wu Chenyang Yang Shie Chen Yongsheng Lu Jingxiao |
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| Affiliation: | (The Key Laboratory of Material Physics of Ministry of Education,School of Physics and Engineering,Zhengzhou University,Zhengzhou 450052,China) |
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| Abstract: | The p-type microcrystalline(μc) silicon thin films were grown by RF plasma enhanced chemical vapor deposition(RF-PECVD) on glass substrates,and the μc-Si:H(p)/c-Si(n) hetero-junction solar cells were fabricated with the films.The impacts of the growth conditions,such as the pressure,boron-doping,discharge power,substrate temperature,gas flow rate,and concentration of silane,on the microstructures and properties of the films were studied.The current-voltage characteristics of the hetero-junction were evaluated.The preliminary results show that the solar cells,made of the films grown under optimized film growth conditions,works well with an open-circuit voltage of 564 mV.Possible improvement of the μc-Si film growth was also tentatively discussed. |
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| Keywords: | Microcrystalline silicon films Heterojunction solar cells Open-circuit voltage RF-PECVD |
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