室温下射频磁控溅射制备ZnO:Al透明导电薄膜及其性能研究

采用射频磁控溅射技术,在室温下,以ZnO:Al2O3(2%Al2O3(质量比))为靶材,在石英玻璃基底上,采用不同工艺条件制备了ZnO:Al(AZO)薄膜。使用扫描电子显微镜观察了薄膜的表面形貌,X射线衍射分析了薄膜的结构,四探针测量仪得到薄膜的表面电阻,轮廓仪测量了薄膜厚度,并计算了电阻率,最后采用分光光度计测量了薄膜的透过率;研究了溅射功率、溅射气压与薄膜厚度对薄膜电阻率及透过率的影响。结果表明:所制备的AZO薄膜具有(002)择优取向,并且发现薄膜厚度对薄膜的光电性能有明显影响,溅射气压和溅射功率对薄膜电学性能有较大影响,但是对薄膜透过率影响不大。当功率为1kW、溅射气压0.052Pa、AZO薄膜厚度为250nm时,其电阻率为8.38×10-4Ω·cm,波长在550nm处透过率为89%,接近基底的本底透过率92%。当薄膜厚度为1125 nm时薄膜的电阻率降至最低(6.16×10-4Ω·cm)。

Growth and Characterization of ZnO:Al Films at Room Temperature

The transparent conductive Al-doped ZnO(AZO) films were deposited by RF magnetron sputtering of ZnO target mixed with Al2O3(2% Al2O3(wt)) on silica substrates at room temperature.The impacts of the growth conditions on its microstructures and properties were evaluated.And the AZO films were characterized with X-ray diffraction,scanning electron microscopy,and conventional surface probes.The results show that the film thickness strongly affects its resistivity and transmittance of the(002) preferentially oriented AZO films,and that its resistivity also depends on the pressure and sputtering power.Under the optimized conditions:1 kW,0.052 Pa,the resistivity of the AZO films,250 nm in thickness,was found to be 8.38×10-4 Ω·cm,with a transmittance of 89% at a wavelength of 550 nm,pretty close to 92% of the substrate.The 1125 nm thick film displayed the lowest resistivity of 6.16×10-4 Ω·cm.