新型前栅场发射器件的研究

采用刻蚀型介质制作前栅场发射器件。该器件中阴栅结构的形成是利用刻蚀工艺刻蚀介质层,一次性实现栅孔和阴极电极的连通,最后利用电泳沉积工艺转移碳纳米管制备成阴极发射点阵。该工艺避免了对准或套印,使前栅场发射器件制作工艺更简单,降低了成本,更容易实现大面积制作。场发射测试表明当阳压在1500和2000 V时,栅压都能够有效地控制阴极的电子发射。

Fabrication of Normal-Gate Field Emission Display with Carbon Nanotube

A novel type of the normal-gate field emission display(FED) device with the etched dielectric layer and carbon nanotubes was fabricated.First,the cathode-gate structure,where the gate-hole and the cathode are connected,was made by etching the dielectric layer.Next,the device-grade,carbon nanotubes(CNTs) were installed into the holes by electrophoretic deposition to form the field emission dat-matrix.Finally,the prototyped FED device was packed and tested.The preliminary results show that the gate electrode is capable of precisely controlling the emission at voltages of 1500 V and 2000 V.The advantages of the newly-developed techniques over the conventional ones include simple procedure,low cost,no technical limitations in misalignment and overprinting.