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磁控溅射设备中铜靶刻蚀形貌的仿真计算研究
引用本文:胡伟,王人成.磁控溅射设备中铜靶刻蚀形貌的仿真计算研究[J].真空科学与技术学报,2012,32(10):907-912.
作者姓名:胡伟  王人成
作者单位:清华大学精仪系,北京,100084
摘    要:提出了一种铜靶刻蚀形貌模拟方法,基于靶材溅射率与靶材表面磁场水平分量成正比的假设,以美国应用材料公司的小行星PVD磁控溅射装置为算例,实现了复杂运动轨迹铜靶刻蚀形貌的模拟,仿真计算结果与实际设备中铜靶刻蚀形貌有较好的一致性,为通过磁场分布研究靶材刻蚀形貌提供了一种理论方法。

关 键 词:磁控溅射  铜靶刻蚀  仿真计算

Simulation of Surface Morphology Evolution of Sputtered Copper Target
Hu Wei , Wang Rencheng.Simulation of Surface Morphology Evolution of Sputtered Copper Target[J].JOurnal of Vacuum Science and Technology,2012,32(10):907-912.
Authors:Hu Wei  Wang Rencheng
Affiliation:(Department of Precision Instruments and Mechanology,Tsinghua University,Beijing 100084,China)
Abstract:The sputter etching of the copper target,exemplified with the asteroids physical vapor deposition magnetron sputtering setup made in USA,was approximated,modeled,and simulated with the software package ANSYS.The influencing factors,such as the complicated magnetic field distributions and the ion trajectory,were evaluated with appropriate approximations.A novel simulation method was developed to evaluate the evolution of the surface morphology in the sputtering,based on the assumption that the sputtering rate is proportional to the horizontal component of the magnetic field on the target surface.The simulated results were found to be in good agreement with those of the experimental measurement.
Keywords:Magnetron sputtering  Etching copper target  Simulation
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