Photoresponse study of normal incidence detection in p-type GaAs/AIGaAs multiple quantum wells |
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Authors: | G. J. Brown F. Szmulowicz S. M. Hegde |
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Affiliation: | (1) Wright Laboratory, Materials Directorate, WL/MLPO, Wright Patterson, 45433-7707 AFB, OH;(2) University of Dayton Research Institute, 45469-0178 Dayton, OH |
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Abstract: | We studied p-type GaAs/AIGaAs multiple quantum well (MQW) materials as a possible alternative to the current n-type GaAs/AIGaAs MQWs for infrared detection. The advantage of p-type MQWs is that absorption of infrared radiation at normal incidence is not selection rule forbidden as it is for the n-type. We have verified that significant photoresponse occurs at normal incidence in p-type MQWs. We studied changes in the photoresponse spectrum as a function of well width and temperature. The MQW heterostructures were designed to use bound to continuum intersubband absorption in the GaAs valence band and to have a peak photoresponse near 8 μm. The photoresponse spectrum was compared to the first theoretical model of the bound to continuum absorption in p-type GaAs/ AlGaAs MQWs. The theoretical absorption curve was found to be in good qualitative agreement with the experimental results. |
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Keywords: | GaAs/AIGaAs multiple quantum well (MQW) Infrared detectors Intersubband absorption Quantum well infrared photodetector(QWIP) |
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