| ITO薄膜射频磁控溅射法制备及性能研究 |
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| 引用本文： | 夏冬林,杨晟,王树林,赵修建. ITO薄膜射频磁控溅射法制备及性能研究[J]. 玻璃与搪瓷, 2006, 34(4): 13-16 |
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| 作者姓名： | 夏冬林 杨晟 王树林 赵修建 |
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| 作者单位： | 1. 武汉理工大学硅酸盐材料工程教育部重点实验室,湖北,武汉430070
2. 武汉工程大学材料科学与工程学院,湖北,武汉,430073 |
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| 基金项目： | 武汉理工大学校科研和教改项目 |
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| 摘 要： | 以10%SnO2和90%In2O3(以质量计)烧结成的ITO氧化物陶瓷为靶材,采用射频磁控溅射法在玻璃基片成功地制备出光电性能优异的ITO透明导电薄膜。研究了基片温度和氧分压溅射工艺参数对ITO薄膜的结构和光电性能的影响。实验结果表明,采用氧化铟锡陶瓷靶射频磁控溅射制备的ITO薄膜沿(222)晶面生长,薄膜紫外透射光谱的吸收截止边带随着衬底温度和氧分压的升高向短波长方向漂移。
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| 关 键 词： | 射频磁控溅射法 ITO 导电薄膜 光电性能 玻璃基片 |
| 文章编号： | 1000-2871（2006）04-0013-04 |
| 收稿时间： | 2005-07-04 |
| 修稿时间： | 2005-07-04 |
Study on the Optical and Electrical Properties of ITO Thin Films Deposited by R.F. Magnetron Sputtering |
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| XIA Dong-lin,YANG Sheng,WANG Shu-lin,ZHAO Xiu-jian. Study on the Optical and Electrical Properties of ITO Thin Films Deposited by R.F. Magnetron Sputtering[J]. Glass & Enamel, 2006, 34(4): 13-16 |
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| Authors: | XIA Dong-lin YANG Sheng WANG Shu-lin ZHAO Xiu-jian |
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| Affiliation: | 1. Key Laboratory for Silicate Materials Science and Engineering, Ministry of Education, Wuhan University of Technology, Wuhan 430070, China ; 2. School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China |
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| Abstract: | Tin-doped Indium Oxide(ITO)thin films have been deposited onto glass substrates by radio frequency(R.F.) magnetron sputtering using ITO sintered target containing 10% SnO_2 and 90% In_2O_3(in mass).The effects of temperature of substrate and oxygen partial pressures on the electrical and optical properties of ITO thin film have been investigated.It is observed that ITO thin films show a high degree of(222) orientation.The absorption edge of ITO thin films shifted toward lower wavelength with increasing substrate temperature and oxygen partial pressures. |
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| Keywords: | R.F.magnetron sputtering ITO conductive thin film electrical and optical properties glass substrate |
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