| 薄棚氧化层的TDDB研究 |
| |
| 引用本文： | 王晓泉. 薄棚氧化层的TDDB研究[J]. 微纳电子技术, 2002, 39(6): 12-15 |
| |
| 作者姓名： | 王晓泉 |
| |
| 作者单位： | 浙江大学材料科学与工程学系,浙江杭州,310027 |
| |
| 摘 要： | 随着超大规模集成电路的不断发展,薄栅氧化层的质量对器件和电路可靠性的作用越来越重要.经时绝缘击穿(TDDB)是评价薄栅氧化层质量的重要方法.本文重点介绍了TDDB的几种主要击穿模型和机理,比较了软击穿和硬击穿过程的联系与区别,并初步分析了TDDB与测试电场、温度以及氧化层厚度的关系.
|
| 关 键 词： | 薄栅氧化层 绝缘击穿 可靠性 |
| 文章编号： | 1671-4776(2002)06-0012-04 |
| 修稿时间： | 2002-03-20 |
Research on TDDB of thin gate oxide |
| |
| WANG Xiao-quan. Research on TDDB of thin gate oxide[J]. Micronanoelectronic Technology, 2002, 39(6): 12-15 |
| |
| Authors: | WANG Xiao-quan |
| |
| Abstract: | With the development of very large scale integrated(VLSI ),the quality of thin gate oxide plays a more important role in the reliability of devices and circuits.TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.In this paper,sev-eral main breakdown models of TDDB are introduced.Then SBD(soft breakdown)and HBD(hard breakdown)are compared.Finally the relationship between TDDB and field,temperature and gate oxide thickness are illuminated. |
| |
| Keywords: | thin gate oxide dielectric breakdown reliability |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
