MOS晶体管中辐照引起的陷阱正电荷的强压退火

电离辐射在 MOS结构的 Si O2 层中建立正陷阱电荷 ,这些正陷阱电荷在正强栅偏压( + 2 0 V)下迅速减少 ,这是由于正栅压引起硅衬底中的电子向 Si O2 层隧道注入 ,从而与陷阱正电荷复合 .正栅压退火不仅对 N沟 MOS结构非常有效 ,对 P沟 MOS结构也有一定的影响 .给出了辐照后的 NMOS和 PMOS晶体管在强正栅压下退火的实验结果 ,阐明了正栅压下的“隧道退火”机理 .

Bias Annealing of Radiation Induced Positive Trapped Charges in Metal Oxide Semiconductor Transistor

Positive trapped charges are induced by ionizing radiation in the SiO\-2 layer of MOS structure. The trapped charges are rapidly decreased at the strong positive gate bias(+20V). This results from that the positive charges are recombined with electrons injected from the Si substrate into the SiO\-2 layer due to the positive bias. Positive bias annealing is effective on NMOS transistor as well as PMOS transistor. The annealing experimental results of radiated NMOS and PMOS transistors and the mechanism of bias annealing are discussed and analysed.