Chemical vapour deposition of Si3N4 from a gas mixture of Si2Cl6, NH3 and H2

Si₃N₄ layers were obtained on a quartz substrate from a gas mixture of Si₂Cl₆, NH₃ and H₂ under a reduced pressure in a temperature range of 800 to 1300‡ C. Amorphous Si₃N₄ layers that were dense and adherent to the substrate were obtained in a temperature range of 800 to 1100‡ C. On the other hand,α-Si₃N₄ layers were obtained at 1200‡ C and a source-gas ratio (N/Si) of 1.33 to 1.77. The lowest deposition temperature of amorphous Si₃N₄ was considered to be about 700‡ C. The microhardness of amorphous Si₃N₄ obtained in a temperature range of 800 to 1100‡ C was 2400 to 2600 kg mm⁻² (load: 50 g), and that ofα-Si₃N₄ obtained at 1200‡ C was 3400 kg mm⁻². Chlorine contents in the Si₃N₄ layer decreased with increasing deposition temperature and source-gas ratio (N/Si), and with decreasing total pressure.