Charged defects-controlled conductivity in Ge-ln-Se glasses

The variation of the d.c. electrical conductivity, , with composition and temperature was investigated for glasses of the Ge-In-Se system. The results indicate a decrease in the activation energy for electrical conductivity, E, and an increase in on introduction of indium into Ge-Se glasses. The changes in E and with composition (selenium content in the glasses) are identical for the Ge_x In₅ Se_95–x and Ge_x In₈Se_92–x families. The results have been traced to the conduction controlled by charged defects in these chalcogenide glasses. The changes in E and have been explained by a shift in the Fermi level, being brought by the introduction of indium.