a General Physics Institute, Vavilov Street 38, 117942, Moscow, Russia
b Institut für Metallkunde, Seestr. 92, D-70174, Stuttgart, Germany
Abstract:
Computation results of the model of solid state amorphization (SSA) based on a general approach to non-equilibrium phase transitions are reported. The model takes into account the mutual interaction of the structural elements of the amorphous phase via a deformation field. For the experimental parameters, corresponding to semiconductors undergoing amorphization by high-pressure treatment, a family of self-sustaining autowave solutions in the form of a traveling front, a traveling pulse and a series of pulses associated with the traveling front was obtained. The relation of these solutions with the expected morphology of amorphous samples produced by SSA is discussed.