Photoluminescence measurements on undoped CdZnTe grown by the high-pressure bridgman method |
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| Authors: | K Suzuki S Seto T Sawada K Imai M Adachi K Inabe |
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| Affiliation: | (1) Hokkaido Institute of Technology, 006-8585 Sapporo, Japan;(2) Ishikawa National College of Technology, 929-0392 Ishikawa, Japan;(3) Kanazawa University, 920-8667 Kanazawa, Japan |
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| Abstract: | The low temperature photoluminescence of Cd0.91Zn0.09Te grown by the high-pressure Bridgman (HPB) method exhibits a neutral donor bound exciton emission (D0X) at 1.65603 eV with its excited state (D0X*) at 1.65798 eV and neutral acceptor bound exciton emissions (A0X) at 1.64566 eV and 1.65201 eV. Assuming a direct generation and subsequent relaxation of excitons at the D0X* state, we demonstrate that the temporal evolution of the above emission bands is well reproduced by a set of rate equations.
The resultant radiative-lifetime of 1.4 ns for the D0X and 1.5 and 2.0 ns for the A0Xs are compared with various CdZnTe's (CZTs) grown by the other methods to demonstrate the particular nature of the HPB CZT. |
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| Keywords: | CdZnTe time-resolved photoluminescence rate equation bound exciton lifetime |
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