| 溶胶-凝胶法制备Ni掺杂CaCu3Ti4O12陶瓷的显微组织及电性能（英文） |
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| 引用本文： | 张成华,张柯,徐红星,宋琪,杨永涛,于仁红,徐东,程晓农.溶胶-凝胶法制备Ni掺杂CaCu3Ti4O12陶瓷的显微组织及电性能（英文）[J].中国有色金属学会会刊,2012(Z1):127-132. |
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| 作者姓名： | 张成华 张柯 徐红星 宋琪 杨永涛 于仁红 徐东 程晓农 |
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| 作者单位： | 江苏大学材料科学与工程学院;中国科学院半导体研究所半导体材料科学重点实验室;西安交通大学电力设备电气绝缘国家重点实验室;电子科技大学电子薄膜与集成器件国家重点实验室;常州江苏大学工程技术研究院;常州明尔瑞陶瓷有限公司 |
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| 基金项目： | Projects (BK2011243, BK2012156) supported by the Natural Science Foundation of Jiangsu Province;Project (EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment;Project (KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing;Project (KFJJ201105) supported by the Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices;Project (10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province;Project (CJ20125001) supported by the Application Program for Basic Research of Changzhou;Project (11JDG084) supported by the Research Foundation of Jiangsu University |
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| 摘 要： | 采用溶胶凝胶法制备掺杂不同含量NiO(CaCu3NixTi4O12+x,x=0, 0.1, 0.2, 0.3)的CCTO陶瓷,通过扫描电镜和 X 射线衍射对其显微组织和相成分进行了分析,并研究了NiO掺杂对CCTO介电和压敏性能的影响。研究结果表明:Ni对CCTO陶瓷的相位成分没有影响,与用传统固相法制得的样品相比,用溶胶-凝胶法制成的样品具有更小的晶粒尺寸。从介电测量结果来看,当 x=0.2 时,样品具有最高的介电常数和最低的介电损耗。当x=0.3时,得到最低的漏电流,最小值为 0.295,同时,具有最高的阀值电压与非线性系数,最大值分别为1326V/mm和3.1。
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| 关 键 词： | 钛酸铜钙 溶胶-凝胶法 电容器 记忆装置 电性能 显微组织 相变 |
Microstructure and electrical properties of sol-gel derived Ni-doped CaCu3Ti4O12 ceramics |
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| ZHANG Cheng-hua,ZHANG Ke,XU Hong-xing,SONG Qi,YANG Yong-tao,YU Ren-hong,XU Dong,CHENG Xiao-nong.Microstructure and electrical properties of sol-gel derived Ni-doped CaCu3Ti4O12 ceramics[J].Transactions of Nonferrous Metals Society of China,2012(Z1):127-132. |
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| Authors: | ZHANG Cheng-hua ZHANG Ke XU Hong-xing SONG Qi YANG Yong-tao YU Ren-hong XU Dong CHENG Xiao-nong |
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| Affiliation: | 1, 5 1. School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; 2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 3. State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China; 4. State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; 5. Changzhou Engineering Research Institute of Jiangsu University, Changzhou 213000, China; 6. Changzhou Ming Errui Ceramics Co., Ltd., Changzhou 213102, China |
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| Abstract: | Dielectric properties and varistor performance of sol-gel prepared Ni-doped calcium copper titanate ceramics (CaCu3NixTi4O12+x, x=0, 0.1, 0.2, 0.3) were investigated. SEM and XRD were used in the microstructural studies of the specimens and the electrical properties were investigated for varistors. XRD patterns show that the CCTO ceramics were single phase with no Cu-rich phase. SEM results indicated that the samples had smaller grain sizes than those synthesized by traditional solid-state reaction methods. The experimental results show that the highest dielectric constant and lower dielectric loss occur when x=0.2. When x=0.3, the lowest leakage current is obtained and the maximum value reaches 0.295; meanwhile, the lowest threshold voltage and nonlinear coefficient are found, the minimum values of them are 1326 V/mm and 3.1, respectively. |
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| Keywords: | CaCu3Ti4O12 sol-gel capacitors memory devices electrical properties microstructure phase transition |
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