碲纳米线柔性薄膜的制备及其热电性能

柔性热电器件能够直接将人体热量转化为电能, 因而受到广泛的关注。本研究采用水热法合成了碲纳米线, 探究了水热温度和反应溶液的还原性强弱(添加抗坏血酸与否)对碲纳米线形貌及热电性能的影响。与强还原性反应液(添加抗坏血酸)中制备的碲纳米线相比, 弱还原性反应液(未添加抗坏血酸)中制备的碲纳米线具有较高的长径比, 最高可达200, 其组装的薄膜具有更高的电导率, 达到26 S·m^-1。进一步研究了成膜工艺对碲纳米线薄膜热电性能的影响, 发现湿压法可提升薄膜的微观致密度, 使薄膜中碲纳米线之间的微观连接更为紧密, 从而改善了薄膜的载流子迁移率和载流子浓度, 使薄膜的电导率提升了18.3倍, 达到476 S?m^-1, 塞贝克系数为282.9 μV?K^-1, 功率因子达到38 μW?m^-1?K^-2。

Preparation and Thermoelectric Performance of Tellurium Nanowires-based Thin-Film Materials

Flexible thermoelectric devices have received a great deal of interest due to their capability of direct convert human body heat into electrical energy. In this work, we synthesized the tellurium nanowires by using hydrothermal method. The effects of hydrothermal temperature and reducibility of the reaction solution (with or without ascorbic acid) on morphology and thermoelectric properties of tellurium nanowires were investigated. Compared to the nanowires prepared in strong reducing solution, those prepared in relatively weak reducing solution (without ascorbic acid) reveal a higher aspect ratio up to 200 and the as-assembled film exhibits better electrical conductivity up to 26 S·m^-1. It is also found that the wet-press method can enhance the micro-densification of the film, resulting in a tighter connection among the micro-nanowires. Therefore, the carrier mobility and carrier concentration of the tellurium nanowire film are significantly increased. As a result, its electrical conductivity is improved by 18.3 times, reached 476 S?m^-1. Simultaneously the optimal tellurium nanowire film exhibits good performances including Seebeck coefficient (282.9 μV?K^-1) and power factor (38 μW?m^-1?K^-2).