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Electron‐Beam‐Driven III‐Nitride Plasmonic Nanolasers in the Deep‐UV and Visible Region
Authors:Tao Tao  Ting Zhi  Bin Liu  Peng Chen  Zili Xie  Hong Zhao  Fangfang Ren  Dunjun Chen  Youdou Zheng  Rong Zhang
Abstract:Plasmonic nanolasers based on wide bandgap semiconductors are presently attracting immense research interests due to the breaking in light diffraction limit and subwavelength mode operation with fast dynamics. However, these plasmonic nanolasers have so far been mostly realized in the visible light ranges, or most are still under optical excitation pumping. In this work, III‐nitride‐based plasmonic nanolasers emitting from the green to the deep‐ultraviolet (UV) region by energetic electron beam injection are reported, and a threshold as low as 8 kW cm?2 is achieved. A fast decay time as short as 123 ps is collected, indicating a strong coupling between excitons and surface plasmon. Both the spatial and temporal coherences are observed, which provide a solid evidence for exciton‐plasmon coupled polariton lasing. Consequently, the achievements in III‐nitride‐based plasmonic nanolaser devices represent a significant step toward practical applications for biological technology, computing systems, and on‐chip optical communication.
Keywords:III‐nitride  deep‐ultraviolet region  electron‐beam‐driven  plasmonic nanolasers
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