锗硅薄膜的光学特性研究

GeSi薄膜的光学特性可以随内部组分的变化而变化,在光电子集成方面优于GaAs、InP等传统的发光材料,已引起了人们的广泛关注.采用等离子体CVD法在玻璃衬底上沉积GeSi薄膜,研究了不同生长条件下的样品的光学特性,从样品的紫外\|可见光反射谱和透射谱计算出光学带隙,发现随着Ge含量的增加,薄膜的光学带隙减小.并且研究了样品的光学带隙与温度的关系,当GeH4流量为4sccm时,薄膜的光学带隙随温度的升高有一个最小值,当GeH4流量为8sccm时,温度升高而薄膜的光学带隙基本不变.

Study on Optical Properties of GeSi Thin Films

GeSi thin films has great potential because its optical properties can be changed when the chemical composition of the film varies and are prior to conventional luminance materials such as GaAs,InP and so on in the field of photoelectric integration. In this thesis,GeSi films were grown on glass substrates by PECVD. Optical properties of GeSi films grown under different condition were studied by UV visible measurement. Optical band gap was calculated from the UV visible reflection and transmittance spectra, and the results showed that the gap decreased with increasing Ge content. There was the minimum of optical band gap with increasing temperature when the flux of GeH 4 was 4 sccm and the gap didn't change with increasing temperature when the flux was 8 sccm.