High-performance millimetrewave GaAs Schottky-barrier flip-chip diode |
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| Authors: | Setzer C.S. Mattauch R.J. |
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| Affiliation: | Maharishi International University, Physics Department, Fairfield, USA; |
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| Abstract: | Theoretical and experimental results reveal a novel flip-chip structure which allows attainment of both parasitic and internal device element values comparable with, or even superior to, the ultrasensitive whisker-contact Schottky-diode structure. Preliminary results with neither device nor choke structure matched to mixer block show LDSB<10 dB, Tmix approximately 2000 K (91 GHz, 300 K). |
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