| PECVD法淀积氟碳掺杂的氧化硅薄膜表征 |
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| 引用本文： | 丁士进,张庆全,张卫,王季陶.PECVD法淀积氟碳掺杂的氧化硅薄膜表征[J].无机材料学报,2001,16(6):1169-1173. |
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| 作者姓名： | 丁士进 张庆全 张卫 王季陶 |
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| 作者单位： | 复旦大学电子工程系 上海 200433 |
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| 基金项目： | 国家自然科学基金项目(69776026);高等学校骨干教师计划资助 |
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| 摘 要： | 以正硅酸乙酯（ＴＥＯＳ）和八氟环丁烷（Ｃ４Ｆ８）为原料，采用等离子体增强化学气相淀积（ＰＥＣＶＤ）方法制备了氟碳掺杂的氧化硅薄膜（ＳｉＣＯＦ）．样品的Ｘ射线光电子能谱（ＸＰＳ）和傅立叶变换红外光谱（ＦＴＩＲ）分析表明薄膜中含有Ｓｉ－Ｆ、Ｓｉ－Ｏ、Ｃ－Ｆ、Ｃ－ＣＦｘ、ＣＦ2等构型．刚淀积的薄膜的折射率约为１．４０．对暴露在空气中以及在不同温度下退火后薄膜的折射率做了测量，并对其变化机理进行了讨论，同时表明了理想的淀积温度应是３００℃．
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| 关 键 词： | 等离子体增强化学气相淀积 氟碳掺杂的氧化硅薄膜 X射线光电子能谱 傅立叶变换红外光谱 折射率 |
| 文章编号： | 1000-324(2001)06-1169-05 |
| 收稿时间： | 2000-12-8 |
| 修稿时间： | 2000年12月8日 |
Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVD |
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| DING Shi-Jin,ZHANG Qing-Quan,ZHANG Wei,WANG Ji-Tao.Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVD[J].Journal of Inorganic Materials,2001,16(6):1169-1173. |
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| Authors: | DING Shi-Jin ZHANG Qing-Quan ZHANG Wei WANG Ji-Tao |
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| Affiliation: | Department of Electronic Engineering; Fudan University Shanghai 200433; China |
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| Abstract: | Fluorine and carbon-doped silicon oxide films (SiCOF) were deposited from tetraoxethylsilane (TEOS) and octafluorocyclobutane (C4F8) by plasma-enhanced chemical vapor deposition (PECVD). The study of X-ray photoelectron spectrum (XPS) and Fourier transform infrared spectrum (FTIR) of the film reveals that there are Si-F, Si-O, C-F, C-CFx, CF2, etc., configurations co-existing in the film. The refractive index of the as-deposited film is about 1.40. The refractive index of the film was measured as a function of the time of exposure to the atmosphere and annealing temperatures, and the mechanism of the change in the refractive index was discussed. The results show that an ideal deposition temperature is about 300℃. |
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| Keywords: | PECVD SiCOF film XPS FTIR refractive index |
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