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A single-sided PHINES SONOS memory featuring high-speed and low-power applications
Authors:Jau-Yi Wu Ming-Hsiu Lee Tzu-Hsuan Hsu Hsiang-Lan Lung Rich Liu Chih-Yuan Lu
Affiliation:Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu, Taiwan;
Abstract:A single-sided PHINES SONOS memory with hot-hole injection in program operation and Fowler-Nordheim (FN) tunneling in erase operation has been demonstrated for high program speed and low power applications. High programming speed (/spl Delta/V/sub t//program time) of 5 V/20 /spl mu/s, low power consumption of P/E, high endurance of 10 K, good retention, and scaling capability can be demonstrated.
Keywords:
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