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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
Authors:M.‐J. Lee  Y. Park  D.‐S. Suh  E.‐H. Lee  S. Seo  D.‐C. Kim  R. Jung  B.‐S. Kang  S.‐E. Ahn  C. B. Lee  D. H. Seo  Y.‐K. Cha  I.‐K. Yoo  J.‐S. Kim  B. H. Park
Affiliation:1. Semiconductor Devices & Materials Laboratory, Samsung Advanced Institute of Technology, Suwon 440‐600 (Korea);2. Nano Fabrication Technology Center, Samsung Advanced Institute of Technology, Suwon 440‐600 (Korea);3. Department of Physics, Konkuk University, Seoul 143‐701 (Korea)
Abstract:
Keywords:Electronic structures  Electronics  Metals  Platinum  Switches
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