Extremely Low‐Threshold Amplified Spontaneous Emission of 9,9′‐Spirobifluorene Derivatives and Electroluminescence from Field‐Effect Transistor Structure |
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| Authors: | H Nakanotani S Akiyama D Ohnishi M Moriwake M Yahiro T Yoshihara S Tobita C Adachi |
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| Affiliation: | 1. Center for Future Chemistry, Kyushu University, 744 Motooka, Nishi, Fukuoka 819‐0395 (Japan);2. CREST program, Japan Science and Technology Agency (JST), 1‐32‐12 Higashi, Shibuya, Tokyo 150‐0011 (Japan);3. Functional Materials Laboratory, Research and Development Division, Mitsubishi Chemical Group, Science and Technology Research Center, Inc., 1000 Kamoshida, Aoba, Yokohama 227‐8502 (Japan);4. Research and Development Headquarters, Rohm Co., 21 Saiin Mizosaki, Ukyo, Kyoto 615‐8585 (Japan);5. Department of Chemistry, Gunma University, 1‐5‐1 Kiryu, Gunma 376‐8515 (Japan) |
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| Abstract: | By doping 2,7‐bis4‐(N‐carbazole)phenylvinyl]‐9,9′‐spirobifluorene (spiro‐SBCz) into a wide energy gap 4,4′‐bis(9‐carbazole)‐2,2′‐biphenyl (CBP) host, we demonstrate an extremely low ASE threshold of Eth = (0.11 ± 0.05) μJ cm–2 (220 W cm–2) which is the lowest ASE threshold ever reported. In addition, we confirmed that the spiro‐SBCz thin film functions as an active light emitting layer in organic light‐emitting diode (OLED) and a field‐effect transistor (FET). In particular, we succeeded to obtain linear electroluminescence in the FET structure which will be useful for future organic laser diodes. |
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| Keywords: | Doping Electroluminescence Lasing Light‐emitting diodes organic |
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