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Cover Picture: Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self‐Assembled Organic Coatings (Adv. Mater. 14/2007) |
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| Authors: | T Mårtensson J?B Wagner E Hilner A Mikkelsen C Thelander J Stangl B?J Ohlsson A Gustafsson E Lundgren L Samuelson W Seifert |
| Affiliation: | 1. Solid State Physics, Lund University, Box 118, 221 00 Lund (Sweden);2. QuNano AB, Scheelev. 17, Ideon Science Park, 223 70 Lund (Sweden);3. Polymer and Materials Chemistry, Lund University, Box 124, 221 00 Lund (Sweden);4. Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden);5. QuMat AB, Stora Fiskaregatan 13 E, 222 24 Lund (Sweden);6. Institut für Halbleiter‐ und Festk?rperphysik, Johannes Kepler Universit?t Linz, Altenbergerstr. 69, 4040 Linz (Austria) |
| Abstract: | On p. 1801, Lars Samuelson and co‐workers report on InAs nanowires that are grown directly on Si substrates by employing self‐assembled organic coatings to create an oxide template which guides nanowire nucleation. The nanowires extend vertically from the Si(111) substrate (foreground). No metal catalysts are used, and the InAs crystal extends to the nanowire tip as shown in the atomically resolved transmission electron microscopy image (dome background). The reported method constitutes a promising approach to the integration of new components into existing Si technology. |
| Keywords: | Epitaxial growth Nanoelectronics Nanowires semiconductor Silicon Surface patterning |