InGaAsP/InP double heterostructure lasers grown by atmospheric-pressure MOCVD |
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| Authors: | Dupuis R.D. Temkin H. Hopkins L.C. |
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| Affiliation: | AT&T Bell Laboratories, Murray Hill, USA; |
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| Abstract: | Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapour deposition is reported. Optically pumped laser operation at 1.36 ?m and 1.45 ?m has been achieved and broad-area injection lasers operating at 1.37 ?m with threshold current densities as low as 3.6 kA/cm2 have been demonstrated. |
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