| PNP和NPN型异质结双极晶体管的不同设计考虑 |
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| 引用本文： | 严北平,罗晋生.PNP和NPN型异质结双极晶体管的不同设计考虑[J].固体电子学研究与进展,1997,17(3):212-217. |
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| 作者姓名： | 严北平 罗晋生 |
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| 作者单位： | [1]西安电子科技大学微电子学研究所 [2]西安交通大学微电子工程系 |
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| 摘 要： | PNP和NPN高频异质结双极晶体管的设计有明显不同，这主要归因于砷化镓中电子与空穴的迁移率存在显著差别。这种差别在基区和子集电区外延层的设计中体现得尤为明显。文中详细讨论了PNP和NPN两种类型的异质结双极晶体管各自外延层的设计考虑。
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| 关 键 词： | 异质结双极晶体管 PNP型HBT NPN型HBT |
Different Considerations in the Design of PNP and NPN Heterojunction Bipolar Transistors |
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| Yan Beiping.Different Considerations in the Design of PNP and NPN Heterojunction Bipolar Transistors[J].Research & Progress of Solid State Electronics,1997,17(3):212-217. |
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| Authors: | Yan Beiping |
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| Abstract: | There are notable differences in the design of NPN and PNP high frequency HBTs. These result primarily from the dramatic difference in the electronand hole mobilities of GaAs. This is especially apparent in the design of base andthe subcollector epitaxial layers. In this paper,different considerations in design ofPNP and NPN heterojunction bipolar transistors are discussed. |
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| Keywords: | Heterojunction Bipolar Transistor PNP HBT NPN HBT |
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