Low temperature Si2H6 Si epitaxy in-situ doped with AsH3/SiH4 |
| |
Authors: | M Sadamoto J H Comfort R Reif |
| |
Affiliation: | (1) Massachusetts Institute of Technology, 02139 Cambridge, MA;(2) Present address: Mitsui Toatsu Chemicals, Inc., 1-6 Takasago, Takaishi-shi, Osaka, Japan;(3) Present address: T. J. Watson Research Center, IBM, 10598 Yorktown Heights, NY |
| |
Abstract: | The use of disilane (Si2H6) as a silicon source for epitaxial deposition was investigated for both very low pressure chemical vapor deposition (thermal
CVD) and plasma enhanced chemical vapor deposition (PECVD) from 600 to 800° C. The growth rates observed for temperatures
at or below 750° C were at least an order of magnitude higher than those observed for silane (SiH4) using similar deposition conditions. An argon plasma was used to sputter clean the silicon surface, in-situ, immediately
before the deposition. It was found that a low dc bias on the substrate during the argon sputter cleaning process helped remove
carbon and oxide from the surface of the silicon substrate. A 16 min Ar sputter clean at 650° C, 2.5 W rf power, and •50 V
dc bias resulted in a carbon and oxygen concentration at the epilayer-substrate of less than 4 × 1018/cm3 and 2 × 1018/cm3, respectively. In situ arsenic doping during disilane epitaxial growth was carried out by thermal CVD and PECVD using arsine
(AsH3) diluted in silane (SiH4) at 800° C. The results were compared to similar experiments using only SiH4 as the silicon source. Up to 500 ppm of arsine was diluted in the reactant gas and it was found that the Si2H6 growth rates were insensitive to the arsine concentraton in the gas phase. |
| |
Keywords: | Thermal CVD Si Si2H6 PECVD As doping |
本文献已被 SpringerLink 等数据库收录! |
|