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L波段宽带低相噪VCO的设计与制作
引用本文:陈君涛,要志宏. L波段宽带低相噪VCO的设计与制作[J]. 半导体技术, 2008, 33(12)
作者姓名:陈君涛  要志宏
作者单位:中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051
摘    要:提出了一种基于PCB工艺的L波段宽带低相噪VCO电路拓扑结构.采用基极和发射极双端调谐的方式,并引入可变电容反馈,实现了电路的超宽带.同时在低损耗的FR4基板上制作微带小电感以形成高Q谐振器,降低了VCO的相位噪声.基于此方法设计得到的L波段宽带VCO比同类薄膜工艺产品相位噪声低了5 dB以上.

关 键 词:压控振荡器  相位噪声  宽带

Design and Fabrication of Wide Band and Low Phase Noise L Band VCO
Chen Juntao,Yao Zhihong. Design and Fabrication of Wide Band and Low Phase Noise L Band VCO[J]. Semiconductor Technology, 2008, 33(12)
Authors:Chen Juntao  Yao Zhihong
Affiliation:Chen Juntao,Yao Zhihong (The 13th Research Institute,CETC,Shijiazhuang 050051,China)
Abstract:A structure of wide band and low noise L band VCO that based on PCB processing was proposed.Tune signal from both base and emitter port were employed,variable feedback capacitance was used to realized wide band of the circuit.Meanwhile,mini inductance was used on the low loss FR4 dielectric-slab to fabricate high Q resonator.In this way,the phase noise was reduced.The measurements show that the phase noise of the wide band VCO realized is 5 dB lower than the VCO based on thin-film processing.
Keywords:VCO  phase noise  wide band  
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