| Preparation and characterization of La0.9Sr0.1Ga0.8Mg0.2O3–δ thin film deposited by radio frequency magnetic sputtering |
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| 引用本文： | 阳建君,马文会,于洁,陈秀华,邢洁,李蕊.Preparation and characterization of La0.9Sr0.1Ga0.8Mg0.2O3–δ thin film deposited by radio frequency magnetic sputtering[J].中国稀土学报(英文版),2013,31(6):582-588. |
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| 作者姓名： | 阳建君 马文会 于洁 陈秀华 邢洁 李蕊 |
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| 作者单位： | [1]National Engineering Laboratory for Vacuum Metallurgy, Kunming 650093, China [2]Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China [3]Faculty of Environment Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China [4]Faculty of Physical Science and Technology, Yunnan University, Kunming 650091, China |
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| 基金项目： | Project supported by Natural Science Foundation of Yunnan Province （2009ZC027M） and Innovation Fund of Science and Technology for Students （2012YA027） |
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| 摘 要： | La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte materials were synthesized by the solid state reaction method.The conductivity of LSGM materials was detected by four probe method,and it was 0.08 S/cm at 850 ℃.Dense and uniform films of LSGM materials were deposited by the magnetic sputtering on substrates of Si and La0.7Sr0.3Cr0.5Mn0.5O3-δ (LSCM).The experimental results showed that the deposition rates dropped and the average grain sizes of the films enlarged with increase in the substrate temperatures.In the sputtering process,the LSGM film was deposited with preferred growth direction.After annealing,the preferred growth direction disappeared and the film surface became smoother and denser.Through observing the deposition process,deposition mechanism was proposed,which was consistent with a model of island growth.
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| 关 键 词： | solid state reaction magnetic sputtering annealing island growth rare earths |
| 收稿时间： | 9 January 2013 |
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