Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack |
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| Authors: | YANG Mengmeng TU Hailing DU Jun WEI Feng XIONG Yuhua ZHAO Hongbin |
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| Affiliation: | 1. Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China; 2. National Engineering Research Center for Semiconductor Materials＇, General Research Institute for Nonferrous Metals＇, Beijing 100088, China) |
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| Abstract: | Effects of NH3 rapid thermal annealing (RTA) on the interface and electrical properties of Gd-doped HfO2 (GDH)/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2×10?3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower (3.9×10?4 A/cm2). The effective permittivity extracted from the C-V curves was ～14.1 and ～13.1 for samples without and with RTA, respectively. |
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| Keywords: | Gd-doped HfO2 high-k NH3 annealing interface electrical properties rare earths |
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