Excellent passivation effect of Cat-CVD SiNx/i-a-Si stack films on Si substrates |
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Authors: | Koichi Koyama Keisuke OhdairaHideki Matsumura |
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Affiliation: | Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan |
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Abstract: | We have demonstrated that the surface recombination velocity can be lowered to as low as 1.3 cm/s for n-type c-Si wafers and to 9.0 cm/s for p-type wafers by using amorphous Si (a-Si) and Si nitride (SiNx) stacked films prepared by catalytic chemical vapor deposition (Cat-CVD). These values are much lower than those of c-Si wafers passivated by same stacked structures formed by low-damage remote plasma-enhanced CVD (PECVD). It is revealed that Cat-CVD a-Si insertion layers play an important role to improve interface quality, and also SiNx films are also essential for reducing the surface recombination velocity down to such low levels. |
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Keywords: | Cat-CVD HWCVD Passivation Amorphous silicon Silicon nitride Surface recombination velocity Carrier lifetime |
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