Study of amorphous Ta2O5 thin films by DC magnetron reactive sputtering |
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| Authors: | K. Chen M. Nielsen G. R. Yang E. J. Rymaszewski T. -M. Lu |
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| Affiliation: | (1) Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, 12180 Troy, New York;(2) Physics Department, Rensselaer Polytechnic Institute, 12180 Troy, New York;(3) Materials Engineering Department, Rensselaer Polytechnic Institute, 12180 Troy, New York |
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| Abstract: | The dc magnetron reactive sputtering deposition of tantalum pentoxide (Ta2O5) thin films was investigated. By combining Schiller's criterion and Reith’s “target preoxidation” procedure, high quality Ta2O5 thin films were prepared at a high deposition rate of about lOOÅ;/min. The deposited films were amorphous, with a refractive index around 2.07 and a dielectric constant of 20. An optical transmit-tance of 98.6% was obtained for a 4500Â thick film. The leakage current density is 5 × 10?9 A/cm2 at an electric field strength of 1 MV/cm and its breakdown field strength is above 2 MV/cm. The temperature coefficient of capacitance for capacitors fabricated using the deposited films is approximately +230 ppm/°C. X-ray photoelectron spectroscopy shows that the films are stoichiometric tantalum pentoxide, Ta2O5, and exhibit good stability. |
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| Keywords: | dc magnetron reactive sputtering stoichiometry tantalum oxide thin films x-ray photoelectron spectroscopy |
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