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| 开口隔离层上多晶硅薄膜制备 | |
| 引用本文： | 梁宗存,柳锡运,沈辉.开口隔离层上多晶硅薄膜制备[J].太阳能学报,2006,27(4):369-372. |
| 作者姓名： | 梁宗存 柳锡运 沈辉 |
| 作者单位： | 1. 中国科学院广州能源研究所,广州,510640 2. 中国科学院广州能源研究所,广州,510640;华南理工大学材料学院,广州,510640 3. 中山大学,广州,510275 |
| 基金项目： | 中国科学院资助项目;广东省博士启动基金 |
| 摘 要： | 在SSP硅带衬底上制备开口SiO2隔离层,在隔离层上沉积多晶硅薄膜籽晶层;然后以ZMR将制备的多晶硅薄膜区融、进行再结晶,制备了SSP隔离层上多晶硅薄膜,并制备了多晶硅薄膜电池。研究结果表明:ZMR对籽晶层的区融、结晶效果比较理想,晶粒尺寸增大到厘米级长、毫米级宽;经过晶硅薄膜沉积后,开口隔离层的孔洞未完全被多晶硅薄膜层覆盖住;制备的电池的光特性参数Voc、Isc、FF都比较低,电池的最高转换效率为3.83%;指出了改进的工艺措施。 |
| 关 键 词： | 多晶硅薄膜电池 颗粒硅带 隔离层 |
| 文章编号： | 0254-0096（2006）04-0369-04 |
| 收稿时间： | 12 12 2004 12:00AM |
| 修稿时间： | 2004-12-12 |
PREPARATION OF POLYCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON SSP SUBSTRATES WITH PERFORATED INTERMEDIATE SiO2 LAYER |
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| Liang Zongcun,Liu Xiyun,Shen Hui.PREPARATION OF POLYCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON SSP SUBSTRATES WITH PERFORATED INTERMEDIATE SiO2 LAYER[J].Acta Energiae Solaris Sinica,2006,27(4):369-372. | |
| Authors: | Liang Zongcun Liu Xiyun Shen Hui |
| Affiliation: | 1. Guangzhou Institute of Energy Conversion, CAS, Guangzhou 510640,China; 2. Zhong shan University, Guangzhou 510275,China |
| Abstract: | The perforated intermediate SiO_2 layer was prepared on SSP substrate,then the seeding layer was deposited and recrystallized by Zone Melting Recrystallisation(ZMR).The polycrystalline silicon thin film solar cells were prepared on the seeding layer.Results show that the grain size of polycrystalline silicon thin films increased to several centimeters long and millimeters width after ZMR.The perforated holes are not covered completely with polycrystalline silicon thin films.The illuminated parameters of solar cells such as FF,V_(oc) and I_(sc) are low;the highest efficiency of the solar cells is 3.83%.Improved technologies were pointed out. |
| Keywords: | polycrystalline silicon thin film solar cells SSP substrate intermediate layer |
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