铝基板阳极氧化成膜温度与膜层结构

对铝基板在草酸体系下阳极氧化成膜温度进行了研究,发现膜的起始破坏温度为32.5℃,而与草酸电解液的浓度关系不大。通过XRD、SEM对膜层进行了分析,并测试了膜层的绝缘性能。结果表明:氧化膜层是以非晶态形式存在的,膜表面存在直径80nm左右的针状物,形成Al(OH)3水合物。较高溶液温度下,草酸的溶解作用加剧了膜层断面开裂、膜质疏松等缺陷,严重影响着膜层的绝缘性能,温度不超过32.5℃,能得到均匀、致密的膜层。

Formed Film Temperature of Anode Oxidation and Structure of Film Layer for Al Metal Substrate

The temperature range of making Al2O3 films on Aluminium metal substrate was researched using anodizing in oxalic acid electrolyte. The results of the experiment show that Al2O3 films were destroyed above 32.5℃,which has nothing with concentration of oxalic acid electrolyte almost. The Al2O3 films were investigated using XRD and SEM,and insulated properties of the Al2O3 films are measured. The results show the surface films of Al metal substrate are noncrystal. Lots of acicular substance on surface of films,diameter of which is about 80nm,from hydrates of Al(OH)3 absorbed on surface of films. Above 32.5℃,the effect of oxalic acid dissolving films enhances,making cross-section of films rupturing and making films loosening,which debases insulated properties of films consumedly,<32.5℃,film of prepartion are uniformity and density.