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Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization
Authors:Li   J.F. Sun   X.W. Qi   G.J. Sin   J.K.O. Huang   Z.H. Zeng   X.T.
Affiliation:Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore;
Abstract:Low-temperature polycrystalline silicon thin-film transistors were fabricated by nickel-induced lateral crystallization of amorphous silicon. Line and oval-shaped nickel source patterns were compared. The oval-shaped nickel source was found to render better device performance, including lower leakage current and higher on/off current ratio. The observation is interpreted by the crystallization and nickel diffusion behavior. The oval-shaped nickel source introduces less nickel in the channels, which is the physical mechanism responsible for the improved performance.
Keywords:
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