Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization |
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Authors: | Li J.F. Sun X.W. Qi G.J. Sin J.K.O. Huang Z.H. Zeng X.T. |
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Affiliation: | Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore; |
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Abstract: | Low-temperature polycrystalline silicon thin-film transistors were fabricated by nickel-induced lateral crystallization of amorphous silicon. Line and oval-shaped nickel source patterns were compared. The oval-shaped nickel source was found to render better device performance, including lower leakage current and higher on/off current ratio. The observation is interpreted by the crystallization and nickel diffusion behavior. The oval-shaped nickel source introduces less nickel in the channels, which is the physical mechanism responsible for the improved performance. |
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