Reaction chemistry at joined interfaces between silicon nitride and aluminium |
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Authors: | X S Ning T Okamoto Y Miyamoto A Koreeda K Suganuma |
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Affiliation: | (1) The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567 Osaka, Japan;(2) Present address: National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, 239 Kanagawa, Japan |
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Abstract: | Joined interfaces of HIPed additive-free silicon nitride ceramics/aluminium braze bonded at a low temperature of 1073 K for
18 ks or at a high temperature of 1473 K for 1.8 ks in vacuum of 1.3 mPa and of β silicon nitride powders/aluminium powders
bonded at the low temperature for 1.8 ks or 18 ks in the same vacuum are identified by analytical transmission electron microscopy
and X-ray diffraction method. Mullite, some small crystals and β′-sialon are detected at the interface of the ceramics/aluminium
braze bonded at the low temperature and 15R AIN-polytype sialon, β′-sialon, aluminium nitride, mullite and silica-alumina
noncrystalline are detected at that bonded at the high temperature. At the interface of the two kinds of powders, aluminium
nitride and silicon are also detected besides β′-sialon and silica-alumina noncrystalline even though the bonding was conducted
at the low temperature. The interfacial reactions of the joints are influenced not only by bonding temperature but also by
the oxide formed at the interface before bonded. |
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